Abstract
The parameters of the epitaxial structures {3C/6H}-SiC have been investigated. The heteroepitaxial growth was conducted by sublimation epitaxy in an open system. The presence of the 3C polytype was confirmed by x-ray investigations. The capacitance-voltage and current-voltage characteristics and the electroluminescence spectra of the p-n structures were investigated. It was found that a thin, slightly doped, defective p-6H-SiC layer was formed between p-3C-SiC and n-6H-SiC in the heteropolytypic structures; this layer detetmined the electrical properties of the diode structures.
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Fiz. Tekh. Poluprovodn. 31, 1083–1086 (September 1997)
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Lebedev, A.A., Savkina, N.S., Tregubova, A.S. et al. Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC. Semiconductors 31, 926–928 (1997). https://doi.org/10.1134/1.1187154
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DOI: https://doi.org/10.1134/1.1187154