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High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

  • Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.)
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Abstract

InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature are investigated by high-resolution x-ray diffractometry. It is shown that despite a very high density of point defects due to the presence of excess arsenic, the as-grown superlattice has high crystal perfection. An analysis of the changes in the x-ray diffraction curves shows that high-temperature annealing, which is accompanied by the formation of As clusters and diffusion of indium, produces significant structural transformations in the GaAs matrix and at the interfaces.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn & V. V. Tret’yakov

  2. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. V. Preobrazhenskii, M. A. Putyato & B. R. Semyagin

Authors
  1. N. N. Faleev
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  2. V. V. Chaldyshev
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  3. A. E. Kunitsyn
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  4. V. V. Tret’yakov
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  5. V. V. Preobrazhenskii
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  6. M. A. Putyato
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  7. B. R. Semyagin
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Fiz. Tekh. Poluprovodn. 32, 24–31 (January 1998)

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Faleev, N.N., Chaldyshev, V.V., Kunitsyn, A.E. et al. High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature. Semiconductors 32, 19–25 (1998). https://doi.org/10.1134/1.1187352

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  • DOI: https://doi.org/10.1134/1.1187352

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