Abstract
The position of the local and quasi-local states of metal atoms (alkali metals, group-III metals, the copper group) adsorbed on the surface of 6H-SiC are calculated within the framework of the extended Anderson-Halstane model of the semiconductor density of states. The results of these calculations are compared with the experimental data on Schottky barriers.
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Fiz. Tekh. Poluprovodn. 32, 68–71 (January 1998)
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Davydov, S.Y., Lebedev, A.A. & Tikhonov, S.K. Calculation of the Schottky barrier height at the early stage of formation of the (silicon carbide)-(metallic submonolayer) contact. Semiconductors 32, 58–60 (1998). https://doi.org/10.1134/1.1187359
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DOI: https://doi.org/10.1134/1.1187359