Abstract
Heterojunctions were obained by mechanical clamping of anodized 6H-SiC wafers to wafers of layered III–VI semiconductors (InSe and GaSe) at 300 K. On account of the high degree of perfection of the cleavage surfaces, a strong and quite perfect electrical contact is formed. The photo-emf spectrum of the heterojunctions has the form of a wide band. The longwavelength edge of this band is due to the narrow-gap component and the short-wavelength edge is due to the narrow-gap component and the short-wavelength edge is due to absorption in SiC.
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Fiz. Tekh. Poluprovodn. 32, 326–328 (March 1998)
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Lebedev, A.A., Lebedev, A.A., Rud’, Y.V. et al. Preparation and photosensitivity of heterostructures based on anodized silicon carbide. Semiconductors 32, 295–296 (1998). https://doi.org/10.1134/1.1187349
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DOI: https://doi.org/10.1134/1.1187349