Abstract
The dark conductivity and photoconductivity along with pulsed electron spin resonance have been measured over a wide temperature range with a high crystallinity hydrogenated microcrystalline silicon (μc-Si: H) sample. The transport mechanism in μc-Si: H is discussed on the basis of these measurements. Striking similarities in the temperature dependences of the dark conductivity and photoconductivity between μc-Si: H and some well-studied materials, such as hydrogenated amorphous silicon, suggest that at low temperatures hopping of carriers between localized states dominates the transport properties of μc-Si: H.
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Fiz. Tekh. Poluprovodn. 32, 905–909 (August 1998)
Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor
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Zhou, J.H., Baranovskii, S.D., Yamasaki, S. et al. Transport properties of microcrystalline silicon at low temperatures. Semiconductors 32, 807–811 (1998). https://doi.org/10.1134/1.1187511
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DOI: https://doi.org/10.1134/1.1187511