Abstract
The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time.
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Fiz. Tekh. Poluprovodn. 33, 1462–1464 (December 1999)
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Agekyan, V.F., Stepanov, Y.A., Emtsev, V.V. et al. Effect of γ irradiation on the photoluminescence kinetics of porous silicon. Semiconductors 33, 1315–1317 (1999). https://doi.org/10.1134/1.1187915
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DOI: https://doi.org/10.1134/1.1187915