Abstract
InGaAsP epitaxial layers, which are obtained in the instability region on InP (001) and GaAs (001) substrates, are investigated by photoluminescence and transmission-electronmicroscopy methods. The results are discussed on the basis of the theory of spinodal decomposition of solid solutions. It is established experimentally that in certain temperature and composition ranges the solid solutions InGaAsP are a system of charged, alternating (in mutually perpendicular directions [100] and [010]) domains of a solid solution with two different compositions and different lattice constants. The domain structure is very clearly defined at the surface of the epitaxial film and becomes blurred in the film near the substrate. The data obtained very likely show spinodal decomposition of the solid solutions InGaAsP in the test samples.
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Fiz. Tekh. Poluprovodn. 33, 544–548 (May 1999)
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Bert, N.A., Vavilova, L.S., Ipatova, I.P. et al. Spontaneously forming periodic composition-modulated InGaAsP structures. Semiconductors 33, 510–513 (1999). https://doi.org/10.1134/1.1187719
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DOI: https://doi.org/10.1134/1.1187719