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Growth of III-N materials and devices by metalorganic chemical vapor deposition

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Abstract

The characteristics of III-V nitride semiconductor epitaxial layers grown by metalorganic chemical vapor deposition are of interest for the realization of many technologically important devices. This paper will review heteroepitaxial growth on (0001) sapphire substrates as well as the selective-area and subsequent lateral epitaxial overgrowth on masked substrate surfaces.

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Authors and Affiliations

  1. Microelectronics Research Center PRC/MER 1606D-R9900, The University of Texas at Austin, Austin, TX, 78712-1100, USA

    R. D. Dupuis, P. A. Grudowski, C. J. Eiting & J. Park

  2. The Air Force Research Lab., Materials & Manufacturing Directorate, WPAFB, OH, 45433-7707, USA

    C. J. Eiting

Authors
  1. R. D. Dupuis
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  2. P. A. Grudowski
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  3. C. J. Eiting
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  4. J. Park
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  5. C. J. Eiting
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Additional information

Fiz. Tekh. Poluprovodn. 33, 1059–1063 (September 1999)

This article was published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.

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Dupuis, R.D., Grudowski, P.A., Eiting, C.J. et al. Growth of III-N materials and devices by metalorganic chemical vapor deposition. Semiconductors 33, 965–969 (1999). https://doi.org/10.1134/1.1187813

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  • DOI: https://doi.org/10.1134/1.1187813

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