Abstract
We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractional-monolayer CdSe recombination region in an expanded ZnSe quantum well and a waveguide based on a variably-strained, short-period superlattice are reported. Growth of a fractional-monolayer CdSe region with a nominal thickness of 2–3 ML, i.e., less than the critical thickness, on a ZnSe surface (Δa/a∼7%) leads to the formation of self-organized, pseudomorphic, CdSe-enriched islands with lateral dimensions ∼10–30 nm and density ∼2×1010 cm−2, which serve as efficient centers of carrier localization, giving rise to effective spatial separation of defective regions and regions of radiative recombination and, as a result, a higher quantum efficiency. Laser structures for optical pumping in the (Zn, Mg) (S, Se) system with a record-low threshold power density (less than 4 kW/cm2 at 300 K) and continuous-wave laser diodes in the system (Be, Mg, Zn) Se with a 2.5 to 2.8-ML-thick, fractional-monolayer CdSe active region have been obtained. The laser structures and diodes have an improved degradation resistance.
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E. Kato, H. Noguchi, M. Nagai, H. Okuyama, S. Kijima, and A. Ishibashi, Electron. Lett. 34, 282 (1998).
T. V. Shubina, S. V. Ivanov, A. A. Toropov, G. N. Aliev, M. G. Tkatchman, S. V. Sorokin, N. D. Il’inskaya, and P. S. Kop’ev, J. Cryst. Growth 184/185, 596 (1998).
S. Ivanov, A. Toropov, S. Sorokin, T. Shubina, A. Lebedev, P. Ko’pev, Zh. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr, Appl. Phys. Lett. 73, 2104 (1998).
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il’inskaya, A. V. Lebedev, I. V. Sedova, P. Ko’pev, Zh. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr, Fiz. Tverd. Tela (St. Petersburg) 32, 1272 (1998) [Phys. Solid State 32, 1137 (1998)].
J. M. Gerald and O. Sermage, Appl. Phys. Lett. 68, 3123 (1996).
K. Nakano, in Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Chiba, Japan, 1998), p. 395.
A. Waag, Th. Litz, F. Fischer, H.-J. Lugauer, T. Baron, K. Schüll, U. Zehnder, T. Gerhart, U. Lunz, and M. Keim, G. Reuscher, and G. Landwehr, J. Cryst. Growth 184/185, 1 (1998).
S. H. Xin, P. D. Wang, A. Yin, C. Kim, M. Dobrovollska, J. L. Merz, and J. K. Furdyna, Appl. Phys. Lett. 69, 3884 (1996).
H.-C. Ko, D.-C. Park, Y. Kawakami, and S. Fujita, Appl. Phys. Lett. 70, 3278 (1997).
K. Leonardi, H. Heinke, K. Ohkawa, D. Hommel, H. Selke, F. Gindele, and U. Woggon, Appl. Phys. Lett. 71, 1510 (1997).
S. V. Ivanov, A. A. Toropov, T. V. Shubina, S. V. Sorokin, A. V. Lebedev, P. S. Kop’ev, G. R. Pozina, J. P. Bergman, and B. Monemar, J. Appl. Phys. 83, 3168 (1998).
Z. Zhu, H. Yoshihara, K. Takebayashi, and T. Yao, Appl. Phys. Lett. 63, 1678 (1993).
A. A. Toropov, S. V. Ivanov, T. V. Shubina, A. V. Lebedev, S. V. Sorookin, P. S. Kop’ev, G. R. Pozina, J. P. Bergman, and B. Monemar, J. Cryst. Growth 184/185, 293 (1998).
F. Gindele, C. Varkle, U. Woggon, W. Langbein, J. M. Hvam, K. Leonarke, K. Ohkawa, and D. Hommel, J. Cryst. Growth 184/185, 306 (1998).
M. Strassburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop’ev, and Zh. I. Alferov, Appl. Phys. Lett. 72, 942 (1998).
M. A. Haase, P. F. Baude, M. S. Hagedorn, J. Qiu, J. M. DePuydt, H. Cheng, S. Guba, G. E. Höfler, and B. J. Wu, Appl. Phys. Lett. 63, 2315 (1993).
K. P. O’Donnell, D. M. Bagnall, O. J. Wright, and B. Cockayne, Phys. Status Solidi B 187, 451 (1995).
N. N. Ledentsov, I. L. Krestnikov, M. V. Maximov, S. V. Ivanov, S. V. Sorokin, P. S. Kop’ev, Zh. I. Alferov, D. Bimberg, and C. M. Sotomayor Torres, Appl. Phys. Lett. 69, 1343 (1996).
S. V. Ivanov, S. V. Sorokin, P. S. Kop’ev, J. R. Kim, N. D. Jung, and H. S. Park, J. Cryst. Growth 159, 16 (1996).
A. Waag, F. Fischer, K. Schüll, T. Baron, H.-J. Lugauer, Th. Litz, U. Zehnder, W. Ossau, T. Gerhardt, M. Keim, G. Reuscher, and G. Landwehr, Appl. Phys. Lett. 70, 280 (1997).
A. Toropov, S. Ivanov, T. Shubina, S. Sorokin, A. Lebedev, A. Sitnikova, P. Kop’ev, M. Willander, G. Pozina, J. Bergman, and B. Monemar, Jpn. J. Appl. Phys. 38, Pt 1, No. 113 (1999) (in print).
A. Lebedev, S. Sorokin, A. Toropov, T. Shubina, N. Il’inskaya, O. Nekrutkina, S. Ivanov, G. Pozina, P. Bergman, and B. Monemar, Acta Phys. Pol. A 94, 421 (1998).
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Fiz. Tekh. Poluprovodn. 33, 1115–1119 (September 1999)
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Ivanov, S.V., Toropov, A.A., Sorokin, S.V. et al. Blue-green ZnSe lasers with a new type of active region. Semiconductors 33, 1016–1020 (1999). https://doi.org/10.1134/1.1187829
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DOI: https://doi.org/10.1134/1.1187829