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Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage

  • Physics of Semiconductor Devices
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Abstract

Epitaxial-diffused 6H-SiC diodes incorporating a high-resistivity interlayer in the base were studied; the resistance of this interlayer varied when the forward-bias voltage was applied. It is shown that, in spite of the absence of direct indications of the effects of the series resistance (the capacitance is independent of frequency and the value of capacitive cutoff voltage is small), the capacitance measurements for such structures may be incorrect.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. A. Lebedev Jr., A. A. Lebedev & D. V. Davydov

Authors
  1. A. A. Lebedev Jr.
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  2. A. A. Lebedev
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  3. D. V. Davydov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 113–116.

Original Russian Text Copyright © 2000 by A. A. Lebedev, Jr., A. A. Lebedev, Davydov.

Deceased.

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Lebedev, A.A., Lebedev, A.A. & Davydov, D.V. Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage. Semiconductors 34, 115–118 (2000). https://doi.org/10.1134/1.1187964

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  • DOI: https://doi.org/10.1134/1.1187964

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