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Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Experimentally observed phenomenon of the origination of the mode of negative differential resistance and switching in a tunnel diode under the effect of external microwave signal is theoretically interpreted. The reasons for the existence of the ranges of bias voltages applied to the diode and the power levels of microwave signal for which the phenomenon is observed are clarified.

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Authors and Affiliations

  1. Saratov State University, ul. Astrakhanskaya 83, Saratov, 410026, Russia

    D. A. Usanov, A. V. Skripal’, N. V. Ugryumova, S. B. Venig & V. E. Orlov

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  1. D. A. Usanov
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  2. A. V. Skripal’
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  3. N. V. Ugryumova
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  4. S. B. Venig
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  5. V. E. Orlov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 5, 2000, pp. 567–571.

Original Russian Text Copyright © 2000 by Usanov, Skripal’, Ugryumova, Venig, Orlov.

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Usanov, D.A., Skripal’, A.V., Ugryumova, N.V. et al. Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal. Semiconductors 34, 550–554 (2000). https://doi.org/10.1134/1.1188026

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  • DOI: https://doi.org/10.1134/1.1188026

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