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Early stages of oxygen precipitation in silicon: The effect of hydrogen

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

The formation of small oxygen clusters upon heat treatment at 280–375°C was studied in crystalline silicon doped with hydrogen by high-temperature in-diffusion. The presence of hydrogen in concentrations of 1015–1016 cm−3 significantly enhances (by up to a factor of 106 at T≤300°C) the oxygen diffusivity in Si crystals. Possible mechanisms of interaction between O and H impurity atoms and the origin of hydrogen-enhanced oxygen diffusion in silicon are discussed.

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Authors and Affiliations

  1. Institute of Solid-State and Semiconductor Physics, Belarussian Academy of Sciences, ul. Brovki 17, Minsk, 220072, Belarus

    V. P. Markevich & L. I. Murin

  2. Department of Solid State Physics, Lund University, S-221 00, Lund, Sweden

    J. L. Lindström

  3. Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan

    M. Suezawa

Authors
  1. V. P. Markevich
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  2. L. I. Murin
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  3. J. L. Lindström
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  4. M. Suezawa
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 9, 2000, pp. 1039–1045.

Original Russian Text Copyright © 2000 by Markevich, Murin, Lindström, Suezawa.

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Markevich, V.P., Murin, L.I., Lindström, J.L. et al. Early stages of oxygen precipitation in silicon: The effect of hydrogen. Semiconductors 34, 998–1003 (2000). https://doi.org/10.1134/1.1309404

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  • DOI: https://doi.org/10.1134/1.1309404

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