Abstract
InAs layers were grown on p-InAs substrates by epitaxy from metalorganic compounds. Photodiodes were fabricated using the p-n junctions obtained. The current-voltage, capacitance-voltage, and spectral characteristics of the photodiode structures were investigated.
Similar content being viewed by others
References
T. N. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Shersnev, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 30, 1244 (1996) [Semiconductors 30, 656 (1996)].
H. K. Choi, G. W. Turner, and S. J. Eglash, IEEE Photonics Technol. Lett. 6, 7 (1994).
M. P. Mikhailova, S. V. Slobodchikov, N. D. Stoyanov, N. M. Stus’, and Yu. P. Yakovlev, Pis’ma Zh. Tekh. Fiz. 22(8), 63 (1996) [Tech. Phys. Lett. 22, 672 (1996)].
B. Baliga and K. Ghandhi, J. Electrochem. Soc. 121, 1642 (1974).
T. Fukui and Y. Horikoshi, Jpn. J. Appl. Phys. 18, 2157 (1979).
T. Fukui and Y. Horikoshi, Jpn. J. Appl. Phys. 19, L551 (1980).
T. Fukui and Y. Horikoshi, Jpn. J. Appl. Phys. 20, 587 (1981).
S. K. Haywood, R. W. Martin, N. J. Mason, and P. J. Walker, J. Cryst. Growth 97, 489 (1989).
R. M. Biefeld, K. C. Baucom, and S. R. Kurtz, J. Cryst. Growth 137, 231 (1994).
W. Duncan, A. S. M. Ali, E. M. Marsh, and P. C. Spurdens, J. Cryst. Growth 143, 155 (1994).
Etching of Semiconductors, Mir, Moscow, 1965.
M. Levinshtein, S. Rumyantsev and M. Shur [Eds.], Handbook Series on Semiconductor Parameters, World Scientific Publish. Co. Pte. Ltd, Vol. 1.
S. Sze, Physics of Semiconductor Devices, Wiley, N. Y.; Mir, Moscow, 1984.
Infrared Detectors, EG & G Optoelectronic JUDSON, 1995, 53 pp.
Author information
Authors and Affiliations
Additional information
Pis’ma Zh. Tekh. Fiz. 24, 1–7 (April 12, 1998)
Rights and permissions
About this article
Cite this article
Kizhaev, S.S., Mikhailova, M.P., Molchanov, C.C. et al. Growth of InAs photodiode structures from metalorganic compounds. Tech. Phys. Lett. 24, 247–249 (1998). https://doi.org/10.1134/1.1262072
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1262072