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Growth of InAs photodiode structures from metalorganic compounds

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Abstract

InAs layers were grown on p-InAs substrates by epitaxy from metalorganic compounds. Photodiodes were fabricated using the p-n junctions obtained. The current-voltage, capacitance-voltage, and spectral characteristics of the photodiode structures were investigated.

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Pis’ma Zh. Tekh. Fiz. 24, 1–7 (April 12, 1998)

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Kizhaev, S.S., Mikhailova, M.P., Molchanov, C.C. et al. Growth of InAs photodiode structures from metalorganic compounds. Tech. Phys. Lett. 24, 247–249 (1998). https://doi.org/10.1134/1.1262072

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