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Density distribution of a two-dimensional electron gas in a semiconducting heterostructure with a periodic gate electrode

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Abstract

Calculations are made of the electron density distribution profiles in a layer of two-dimensional electron gas in a semiconducting heterostructure when reference and reverse potential biases are applied simultaneously to neighboring stripes of a periodic gate electrode. It is shown that for the structure parameters used experimentally the density distribution profile differs appreciably from rectangular and from sinusoidal.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Saratov Branch, Saratov

    Yu. A. Morozov & V. V. Popov

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  1. Yu. A. Morozov
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  2. V. V. Popov
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Pis’ma Zh. Tekh. Fiz. 25, 37–41 (January 12, 1999)

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Morozov, Y.A., Popov, V.V. Density distribution of a two-dimensional electron gas in a semiconducting heterostructure with a periodic gate electrode. Tech. Phys. Lett. 25, 15–16 (1999). https://doi.org/10.1134/1.1262359

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  • DOI: https://doi.org/10.1134/1.1262359

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