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On mechanisms of defect formation in aluminum crystals bombarded by low-energy heavy ions

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Abstract

The mechanisms of formation of vacancies and radiation-induced adsorbed and interstitial atoms in the cascades of atomic collisions induced by 25-, 40-and 50-eV Ar and Xe ions normally incident onto the Al(100) surface at 300 K are discussed within the framework of the molecular dynamics approach. The numbers of bulk and surface vacancies formed in the course of a collision cascade exhibit two maxima in the case of Xe ions and a single maximum in the case of Ar ions.

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Authors and Affiliations

  1. Zaporozhye State Technical University, Zaporozhye, 69063, Ukraine

    G. V. Kornich

  2. Institut für Allgemeine Physik, Technische Universität Wien, A-1040, Wien, Austria

    G. Betz

  3. Donetsk State University, Donetsk, 340055, Ukraine

    A. I. Bazhin

Authors
  1. G. V. Kornich
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  2. G. Betz
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  3. A. I. Bazhin
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Additional information

__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 26, No. 11, 2000, pp. 18–22.

Original Russian Text Copyright © 2000 by Kornich, Betz, Bazhin.

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Kornich, G.V., Betz, G. & Bazhin, A.I. On mechanisms of defect formation in aluminum crystals bombarded by low-energy heavy ions. Tech. Phys. Lett. 26, 455–457 (2000). https://doi.org/10.1134/1.1262875

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  • DOI: https://doi.org/10.1134/1.1262875

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