Derp _3/2-Analogzustand in⁵¹V

Abstract

In an investigation ofT=7/2 analogue states in⁵¹V the⁵⁰Ti(p, γ) excitation curve has been measured for proton bombarding energies 1280–1480 keV and 2340–2660 keV. From the (p, γ) resonances 29 new virtual levels in the region of 9316–9510 keV excitation energy in⁵¹V were determined. The strong resonance atE _p=1 371 keV has been identified as the isobaric analogue state of the⁵¹Ti ground state by determining spin and parity of this resonance to be 3/2⁻. There is no evidence for a strong analogue resonance in⁵¹V corresponding to the 1.16 MeV _{p 1/2} state in⁵¹Ti. The γ-decay of the _{p 3/2} analogue state has been studied by measuring branching ratios and angular distributions of primary γ-transitions with a Ge(Li) detector.M1E2 mixing ratios have been determined for these transitions. The total width of the resonance for γ-decay is found to be Γ_γ=1.6±0.4 eV. New bound levels in⁵¹V have been introduced at 3576, 4651 and 4661 keV excitation energy. TheJ ^π values of the 3085, 4770, and 4863 keV states are determined to be 5/2⁻, 5/2⁻, 3/2⁻, respectively. The analogue-antianalogueM1 transition strength is found to be considerably reduced compared to the situation ins-d shell nuclei.