Abstract
An experimental study is described of barrier heights at the junction between (111) faces of semiconductingn-type bulk GaAs and alloyed In−Ge−Ag metal contacts. It is observed that strong corrugation of the semiconducting surface causes the barrier height to be higher than that of flat surfaces.
Similar content being viewed by others
References
H. Hartnagel, B. L. Weiss: J. Mat. Sci.8, 1061 (1973)
W. Tantraporn: J. Appl. Phys.41, 4669 (1970)
F. A. Padovani: InSemiconductors and Semimetals, Vol.7, ed. by Willardson, R. K., and Beer, A. C.: (Academic Press, New York 1971)