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Deep levels of iron implanted inn-type silicon

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Abstract

N-type silicon was implanted with iron at 300keV. Deep-level measurements were performed after annealing pprocesses at various temperatures between 500 and 1100°C. Various levels were observed but no electrical active centers were detectable in the upper half of the forbidden band of Si after 800°C annealing.

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Authors and Affiliations

  1. Institut für Angewandte Physik, Universität, D-8520, Erlangen, Germany

    H. Lefèvre & M. Schulz

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  1. H. Lefèvre
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  2. M. Schulz
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Lefèvre, H., Schulz, M. Deep levels of iron implanted inn-type silicon. Appl. Phys. 18, 35–37 (1979). https://doi.org/10.1007/BF00935901

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  • DOI: https://doi.org/10.1007/BF00935901

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