Abstract
Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×1016ions/cm2) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J.H.Freeman: Proc. European Conf. Ion Impl., Reading, (Peter peregrinus England 1970), pp. 1–18
For example, G.Dearnaley, J.H.Freeman, R.S.Nelson, J.Stephan:Ion Implantation (North-Holland, Amsterdam, and London 1973), pp. 448–492
J.H.Freeman:Ion Implantation in Semiconductors, ed. by S.Namba (Plenum Press, New York 1975) pp. 555–569)
M.Tamura, K.Yagi, N.Sakudo, K.Tokiguchi, T.Tokuyama: Proc. of the 9th Conf. on Solid State Devices (Japan Society of Applied Physics, Tokyo 1977) pp. 193–200
P.D.Parry: J. Vac. Sci. Technol.15, 111–115 (1978)
D.G.Beanland, D.J.Chivers: J. Vac. Sci. Technol.15, 1536–1540 (1978)
H.Müller, W.K.Chu, J.Gyulai, J.W.Mayer, T.W.Sigmon, T.R.Cass: Appl. Phys. Lett.26, 292–294 (1975)
L.Csepregi, J.W.Mayer, T.W.Sigmon: Phys. Lett.54A, 157–158 (1975)
E.T.Yen, B.J.Masters, R.Kastl:Ion Implantation in Semiconductors, ed. by S.Namba (Plenum Press, New York 1975) pp. 501–509
M.Miyao, T.Miyazaki, T.Tokuyama: Jpn. J. Appl. Phys.17, 955–956 (1978)
L.Csepregi, E.F.Kennedy, S.S.Lau, J.W.Mayer: Appl. Phys. Lett.29, 645–648 (1976)
F.L.Vook:Radiation Damage and Defects in Semiconductors (The Institute of Physics, London and Bristol 1972), pp. 60–71
F.F.Morehead, B.L.Crowder: Radiat. Eff.6, 27–32 (1970)
L.Csepregi, E.F.Kennedy, T.J.Gallagher, J.W.Mayer, T.W.Sigmon: J. Appl. Phys.48, 4234–4240 (1977)
T.Tsuchimoto, T.Tokuyama: Radiat Eff.6, 121–127 (1970)
M.Tamura: Appl. Phys. Lett.23, 651–653 (1973)
M.F.Ashby, M.I.Brown: Phil. Mag.8, 1083–1103 (1963)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Tamura, M., Yagi, K., Natsuaki, N. et al. Disorders produced during high-current and high-dose phosphorus ion implantation in silicon. Appl. Phys. 20, 225–229 (1979). https://doi.org/10.1007/BF00886022
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00886022