Abstract
Amorphous siliconp−n junctions with various doping profiles have been prepared by the glow discharge technique and the effect of the barrier profile on electrical properties investigated. Current densities of up to 40 A cm−2 with rectification ratios of 104–105 were obtained withn +−ν−p + structures. The diode quality factor has also been investigated, both in the dark and under illumination.
Similar content being viewed by others
References
W.E.Spear, P.G.LeComber: Solid State Commun.17, 1193–1196 (1975)
W.E.Spear, P.G.Le Comber Philos. Mag.33, 935–949 (1976)
W.E.Spear, P.G.Le Comber, S.Kinmond, M.H.Brodsky: Appl. Phys. Lett.28, 105–107 (1976)
D.E.Carlson, C.R.Wronski: Appl. Phys. Lett.28, 671–673 (1976)
D.I.Jones, R.A.Gibson, P.G.Le Comber, W.E.Spear: Sol. Energy Mater.2, 93–106 (1979)
R.A.Gibson, P.G.Le Comber, W.E.Spear: Solid State Electron Dev.2, S3-S6 (1978)
See, for instance, S.M.Sze:Physics of Semiconductor Devices (Wiley-Interscience, New York 1969) Chap. 3