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Laser annealing of Bi implanted <111> and <100> silicon

  • Solids and Surfaces
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Abstract

The influence of surface orientation in Bi implanted silicon, annealed by Q-switched ruby laser pulse irradiation was investigated. Depth distributions and lattice location of the Bi atoms were obtained using4He backscattering and channeling techniques and the electrical behavior studied by sheet resistance measurements. The dopant profiles show partial surface accumulation and in-depth broadening without influence of the substrate orientation. These profiles can be fitted by a numerical calculation based on the normal freezing model with an interfacial segregation coefficient much higher than the equilibrium one. The impurity atoms located in the in-depth profile are shown to be electrically active when their maximum concentration does not exceed 1020 atoms/cm3.

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Author notes

  1. A. Bontemps

    Present address: Université Scientifique et Médicale de Grenoble, Grenoble, France

Authors and Affiliations

  1. Istituto di Struttura della Materia, Corso Italia 57, I-95129, Catania, Italy

    S. U. Campisano, P. Baeri & M. G. Grimaldi

  2. Département de Recherche Fondamentale, Section de Physique du Solide, Centre d'Etudes Nucléaires de Grenoble, F-38041, Grenoble Cedex, France

    A. Bontemps & R. Danielou

  3. Laboratoire d'Electronique et de Technologie de l'Informatique, Nouveaux Composants Electroniques, Centre d'Etudes Nucléaires de Grenoble, F-38041, Grenoble Cedex, France

    M. Floccari & M. Bruel

Authors
  1. S. U. Campisano
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  2. P. Baeri
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  3. M. G. Grimaldi
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  4. A. Bontemps
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  5. R. Danielou
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  6. M. Floccari
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  7. M. Bruel
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Campisano, S.U., Baeri, P., Grimaldi, M.G. et al. Laser annealing of Bi implanted <111> and <100> silicon. Appl. Phys. 25, 57–63 (1981). https://doi.org/10.1007/BF00935392

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  • DOI: https://doi.org/10.1007/BF00935392

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