Abstract
The paper describes the design and development of an amorphous silicon (a-Si) image sensing element that combines the excellent photo-conductive properties ofa-Si with the proven switching performance ofa-Si field effect transistor (FET) devices. In the present design the switching element is fabricated on top of the photoconductor, making possible an imaging element that is compact, and capable of being produced in linear or two-dimensional arrays. The output current of an integrated elementary device varies from about 10 ΜA at a white light intensity of 1017 photons s−1 cm−2 to about 10 nA at 1013 photons s−1 cm−2. This large dynamic range, providing an excellent grey scale, can be achieved with read-times of about 20 Μs.
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