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Ionographic patterns with amorphous/crystalline contrast

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Abstract

Ion irradiation of thin layers of crystalline semiconductors induces a phase transition to the amorphous state. The concomitant optical contrast between unirradiated, crystalline, and irradiated, amorphous, material may be used for pattern fabrication in the submicron range. This process will be explained by the example of silicon single-crystal layers on sapphire.

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References

  1. G. Müller, S. Kalbitzer: Philos. Mag. B41, 307 (1980)

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  2. L. Ley: InThe Physics of Hydrogenated Amorphous Silicon II, ed. by J.D. Joannopoulos, G. Lucovski. Topics Appl. Phys.56 (Springer, Berlin, Heidelberg 1984) p. 144 and references therein

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  3. K. Bhatia, W. Kraetschmer, S. Kalbitzer: To be published

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Authors and Affiliations

  1. Max-Planck-Institut für Kernphysik, P. O. Box 10 39 80, D-6900, Heidelberg, Fed. Rep. Germany

    S. Kalbitzer

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  1. S. Kalbitzer
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International Patents pending

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Kalbitzer, S. Ionographic patterns with amorphous/crystalline contrast. Appl. Phys. A 44, 153–155 (1987). https://doi.org/10.1007/BF00626416

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  • DOI: https://doi.org/10.1007/BF00626416

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