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Temperature dependence of photodegradation in amorphous hydrogenated silicon

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Abstract

Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.

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Authors and Affiliations

  1. Siemens Research Laboratories, D-8000, München 83, Fed. Rep. Germany

    Y. M. Sun & W. Krühler

  2. Institut für Physikalische Elektronik, Universität, D-7000, Stuttgart 70, Fed. Rep. Germany

    C. E. Nebel & G. H. Bauer

Authors
  1. Y. M. Sun
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  2. W. Krühler
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  3. C. E. Nebel
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  4. G. H. Bauer
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Sun, Y.M., Krühler, W., Nebel, C.E. et al. Temperature dependence of photodegradation in amorphous hydrogenated silicon. Appl. Phys. A 46, 5–8 (1988). https://doi.org/10.1007/BF00615129

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  • DOI: https://doi.org/10.1007/BF00615129

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