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A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3

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Abstract

Interface states in the ferroelectric-semiconductor junction have been investigated from analyses of DLTS andC-V data. Two trap levels are located at 0.21 and 0.36 eV below the conduction band near the silicon side of the interface in the MFS (Metal-Ferroelectric-Semiconductor) structure. The interface states density has been drastically reduced by putting an oxide layer between ferroelectric and semiconductor with certain heat treatment in H2 atmosphere at 500 °C. It has been found that the MFMOS (Metal-Ferroelectric-Metal-Oxide-Semiconductor) structure shows the least interface states density (less than 1011cm−2eV−1) with the maximal dielectric constant of PbTiO3 thin films.

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References

  1. S. Y. Wu: IEEE Trans. ED-21, 499 (1974)

    Google Scholar 

  2. G.H. Haertling, C.E. Land: J. Am. Ceram. Soc.54, 1 (1971)

    Google Scholar 

  3. C.E. Land, W.D. Smith: Appl. Phys. Lett.23, 57 (1973)

    Google Scholar 

  4. A. Okada: J. Appl. Phys.49, 4495 (1978)

    Google Scholar 

  5. M. Isida, H. Matsunami, T. Tanaka: J. Appl. Phys.48, 951 (1977)

    Google Scholar 

  6. Y. Higuma, K. Tanaka, T. Nakagawa, T. Kariya, Y. Hamakawa: Jpn. J. Appl. Phys.16, 1707 (1977)

    Google Scholar 

  7. M. Okuyama, T. Usuki, Y. Hamakawa, T. Nakagawa: Appl. Phys.21, 339 (1980)

    Google Scholar 

  8. M. Oikawa, K. Toda: Appl. Phys. Lett.29, 491 (1976)

    Google Scholar 

  9. R.N. Castellano, L.G. Feinstain: J. Appl. Phys.50, 4406 (1979)

    Google Scholar 

  10. V.G. Gavrilyachenko, R.I. Spinko, M.A. Martynenko, E.G. Fesenko: Sov. Phys.-Solid State12, 1203 (1970)

    Google Scholar 

  11. E. Yamaka, T. Hayashi, M. Matsumoto: Infrared Phys.11, 247 (1971)

    Google Scholar 

  12. I. Ueda, S. Ikegami: Jpn. J. Appl. Phys.7, 236 (1968)

    Google Scholar 

  13. M. Okuyama, Y. Matsui, H. Nakano, T. Nakagawa, Y. Hamakawa: Jpn. J. Appl. Phys.18, 1633 (1979)

    Google Scholar 

  14. M. Okuyama, Y. Matsui, H. Nakano, Y. Hamakawa: Proc. 8th Int. Conf. Vacuum Congress. (1980) p. 503

  15. Y. Matsui, M. Okuyama, N. Fujita, Y. Hamakawa: J. Appl. Phys.52, 5107 (1981)

    Google Scholar 

  16. Y. Matsui, M. Okuyama, Y. Hamakawa: Proc. 3rd Ferroelectric Mat. Appl. (FMA Office, Kyoto, 1981); Jpn. J. Appl. Phys.20, (1981) Suppl. p. 21

    Google Scholar 

  17. Y. Matsui, H. Nakano, M. Okuyama, T. Nakagawa, Y. Hamakawa: Proc. 2nd Ferroelectric Mater. Appl. (1979) p. 239

  18. M. Okuyama, Y. Matsui, H. Seto, Y. Hamakawa: Proc. 12th Conf. Solid State Devices, Tokyo (1980): Jpn. J. Appl. Phys.20, (1981) Suppl. p. 315

    Google Scholar 

  19. K. W. Yeh, R.S. Muller: Appl. Phys. Lett.29, 521 (1976)

    Google Scholar 

  20. D.V. Lang: J. Appl. Phys.45, 3023 (1974)

    Google Scholar 

  21. S.J. Forash: J. Appl. Phys.47, 3597 (1976)

    Google Scholar 

  22. J.W. Chen, A.G. Milnes, A. Rohatgi: Solid State Electron.22, 801 (1979)

    Google Scholar 

  23. W. Fahrner, A. Goetzberger: Appl. Phys. Lett.21, 329 (1972)

    Google Scholar 

  24. C.S. Fuller, R.A. Logan: J. Appl. Phys.28, 1427 (1957)

    Google Scholar 

  25. J.E. Carnes, W.F. Kosonocky: Appl. Phys. Lett.20, 261 (1972)

    Google Scholar 

  26. K. Yamasaki, M. Yoshida, T. Sugano: Jpn. J. Appl. Phys.18, 113 (1979)

    Google Scholar 

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Authors and Affiliations

  1. Faculty of Engineering Science, Osaka University, Tyonaka, 560, Osaka, Japan

    Y. Matsui, M. Okuyama, M. Noda & Y. Hamakawa

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  1. Y. Matsui
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  2. M. Okuyama
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  3. M. Noda
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  4. Y. Hamakawa
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Matsui, Y., Okuyama, M., Noda, M. et al. A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3 . Appl. Phys. A 28, 161–166 (1982). https://doi.org/10.1007/BF00617981

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  • DOI: https://doi.org/10.1007/BF00617981

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