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Characterization of conducting GaAs multilayers by infrared spectroscopy at oblique incidence

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Abstract

The electrical and geometric properties of GaAs multilayer structures are measured nondestructively by infrared reflectance spectroscopy (50–5000 cm−1). Using oblique incidence and both s- and p-polarizations of the probing beam, carrier concentration and thickness of the epitactic films as well as the carrier concentration of the GaAs substrate are determined. The main structures in the spectra are due to phonon reststrahlen bands, Fabry-Perot interferences and the zeros of the dielectric function leading to dips in the reflectance (Berreman Mode). The results compare favorably with a depth-resolved secondary ion mass spectrometric (SIMS) sample analysis. The range of applicability of the method is discussed.

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References

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Author notes

  1. B. Harbecke

    Present address: Flachglas AG, Nürnberger Strasse, D-8475, Wernberg-Köblitz, FRG

Authors and Affiliations

  1. I. Physikalisches Institut RWTH Aachen, D-5100, Aachen, Fed. Rep. Germany

    P. Grosse, B. Harbecke & B. Heinz

  2. Fraunhofer Institut für Angewandte Festkörperphysik, D-7800, Freiburg, Fed. Rep. Germany

    W. Jantz & M. Maier

Authors
  1. P. Grosse
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  2. B. Harbecke
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  3. B. Heinz
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  4. W. Jantz
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  5. M. Maier
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Grosse, P., Harbecke, B., Heinz, B. et al. Characterization of conducting GaAs multilayers by infrared spectroscopy at oblique incidence. Appl. Phys. A 50, 7–12 (1990). https://doi.org/10.1007/BF00323946

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  • DOI: https://doi.org/10.1007/BF00323946

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