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Photothermal deflection spectroscopy study of defects in semi-insulating GaAs

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Abstract

Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage.

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Authors and Affiliations

  1. Dipartimento di Ingegneria Meccanica, II Università di Roma “Tor Vergata”, via E. Carnevale, I-00173, Roma, Italy

    U. Zammit, F. Gasparrini, M. Marinelli, R. Pizzoferrato, F. Scudieri & S. Martellucci

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  1. U. Zammit
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  2. F. Gasparrini
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  3. M. Marinelli
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  4. R. Pizzoferrato
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  5. F. Scudieri
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  6. S. Martellucci
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Zammit, U., Gasparrini, F., Marinelli, M. et al. Photothermal deflection spectroscopy study of defects in semi-insulating GaAs. Appl. Phys. A 52, 112–114 (1991). https://doi.org/10.1007/BF00323725

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  • DOI: https://doi.org/10.1007/BF00323725

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