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Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals

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Abstract

Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.

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Author notes

  1. Th. Czekalla

    Present address: Krupp Atlas Elektronik GmbH, W-2800, Bremen 44

Authors and Affiliations

  1. Institut für Metallforschung, Westfälische-Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, W-4400, Münster, Fed. Rep. Germany

    D. Grünebaum, Th. Czekalla, N. A. Stolwijk & H. Mehrer

  2. Institute for Materials Research, Tohoku University, Katahira 2-1-1, 980, Sendai, Japan

    I. Yonenaga & K. Sumino

Authors
  1. D. Grünebaum
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  2. Th. Czekalla
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  3. N. A. Stolwijk
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  4. H. Mehrer
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  5. I. Yonenaga
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Dedicated to H.J. Queisser on the occasion of his 60th birthday

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Grünebaum, D., Czekalla, T., Stolwijk, N.A. et al. Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals. Appl. Phys. A 53, 65–74 (1991). https://doi.org/10.1007/BF00323437

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