Skip to main content
Log in

Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface

  • High-Resolution Electron Microscopy Of Semiconductor Interfaces
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Epitaxial NiSi2 islands have been grown on Si(111) substrates by the direct reaction of nickel vapour with the silicon substrate in ultra-high vacuum at 400° C. Growth kinetics was shown to depend on the orientation of the islands: A-oriented islands grow about ten times faster than B-oriented ones, with the ratio of the advance rates of the main growth fronts even reaching 30. Applying plan-view transmission electron microscopy and high-resolution electron microscopy of cross sections, a corresponding difference was found in the structure of the NiSi2/Si(111) growth front: Steps at the B-oriented growth front were of three or six interplanar (111) spacings in height, whereas at the A-oriented growth front step-like defects of less than one interplanar (111) spacing in height were observed. These observations are explained by an atomic-scale model of the solid-state reaction, which involves the diffusion of nickel to the interfaces and the nucleation and subsequent lateral propagation of interfacial steps. The difference in the reaction kinetics originates from the presence of kinetic reaction barriers at the NiSi2/Si(111) growth fronts, the barrier at the B-front being higher owing to the lower formation rate of steps of triple atomic height than that of steps of lower height at the A-NiSi2/Si(111) growth front.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J.M. Poate, K.N. Tu, J.W. Mayer (eds.): Thin Films, Interdiffusion and Reactions (Wiley-Interscience, New York 1978)

    Google Scholar 

  2. H. von Känel: Mater. Sci. Rep. 8, 193 (1992)

    Google Scholar 

  3. H. Schmalzried: Solid State Reactions (VCH, Weinheim 1981)

    Google Scholar 

  4. G. Ottaviani: J. Vac. Sci. Technol. 16, 1112 (1979)

    Google Scholar 

  5. K.N. Tu, G. Ottaviani, U. Gösele, H. Föll: J. Appl. Phys. 54, 758 (1983)

    Google Scholar 

  6. S.U. Campisano: In Thin Film Phenomena — Interfaces and Interactions, ed. by J.E.E. Baglin, J.M. Poate (Electrochemical Society, New York 1978) p. 129

    Google Scholar 

  7. F.M. d'Heurle: J. Mater. Res. 3, 167 (1988)

    Google Scholar 

  8. R.W. Bené: J. Appl. Phys. 61, 1826 (1987)

    Google Scholar 

  9. K.N. Tu, J.W. Mayer: In Thin Films, Interdiffusion and Reactions, ed. by J.M. Poate, K.N. Tu, J.W. Mayer (Wiley-Interscience, New York 1978)

    Google Scholar 

  10. Ya.Ye. Geguzin, Yu.S. Kaganovsky, L.M. Paritskaya, V.I. Solunsky: Phys. Met. Metallogr. 47, 127 (1980) [Translation from Fiz. Met. Metalloved. 47, 821 (1979)]

    Google Scholar 

  11. U. Gösele, K.N. Tu: J. Appl. Phys. 53, 3252 (1982)

    Google Scholar 

  12. H. Schmalzried: Ber. Bunsenges. Phys. Chem. 82, 273 (1978)

    Google Scholar 

  13. S.P. Murarka: J. Vac. Sci. Technol. 17, 775 (1980)

    Google Scholar 

  14. F.M. d'Heurle, S. Petersson, L. Stolt, B. Strizker: J. Appl. Phys. 53, 5678 (1982)

    Google Scholar 

  15. R.T. Tung, J.M. Poate, J.C. Bean, J.M. Gibson, D.C. Jacobson: Thin Solid Films 93, 77 (1982)

    Google Scholar 

  16. H. Föll, P.S. Ho, K.N. Tu: Philos. Mag. A 45, 31 (1982)

    Google Scholar 

  17. D. Cherns, G.R. Anstis, J.L. Hutchison, J.C.H. Spence: Philos. Mag. A 46, 849 (1982)

    Google Scholar 

  18. R.T. Tung: J. Vac. Sci. Technol. A 5, 1840 (1987)

    Google Scholar 

  19. D. Hesse, R. Mattheis: Phys. Stat. Sol. (a) 116, 67 (1989)

    Google Scholar 

  20. R.T. Tung, J.M. Gibson, J.M. Poate: Phys. Rev. Lett. 50, 429 (1983)

    Google Scholar 

  21. R.T. Tung: Phys. Rev. Lett. 52, 461 (1984)

    Google Scholar 

  22. J.C. Hensel, A.F.J. Levi, R.T. Tung, J.M. Gibson: Appl. Phys. Lett. 47, 151 (1985)

    Google Scholar 

  23. E.J. van Loenen: J. Vac. Sci. Technol. A 4, 939 (1986)

    Google Scholar 

  24. E. Vlieg, A.E.M.J. Fischer, J.F. van der Veen, B.N. Dev, G. Materlik: Surf. Sci. 178, 36 (1986)

    Google Scholar 

  25. K. Akimoto, T. Ishikawa, T. Takahashi, S. Kikuta: Jpn. J. Appl. Phys. 22, L798 (1983)

  26. P. Werner, R. Mattheis, D. Hesse, R. Hillebrand, J. Heydenreich: Phys. Stat. Sol. (a) 116, 81 (1989)

    Google Scholar 

  27. J.M. Gibson, J.C. Bean, J.M. Poate, R.T. Tung: Appl. Phys. Lett. 41, 818 (1982)

    Google Scholar 

  28. A. Catana, P.E. Schmidt, S. Rieubland, F. Levy, P. Stadelmann: J. Phys. Cond. Matter 1, 3999 (1989)

    Google Scholar 

  29. A.F. de Jong, C.W.T. Bulle-Lieuwma: Philos. Mag. A 62, 183 (1990)

    Google Scholar 

  30. C.W.T. Bulle-Lieuwma, A.H. van Ommen, D.E.W. Vandenhoudt, J.J.M. Ottenheim, A.F. de Jong: J. Appl. Phys. 70, 3093 (1991)

    Google Scholar 

  31. A.C. Daykin, C.J. Kiely, R.C. Pound: Acta Metall. Mater. 40, Suppl., S 195 (1992)

  32. C.W.T. Bulle-Lieuwma, D.E.W. Vandenhoudt, J. Henz, N. Onda, H. von Känel: J. Appl. Phys. 73, 3220 (1993)

    Google Scholar 

  33. A.E.M.J. Fischer, W F.J. Slijkerman, K. Nakagawa, R.J. Smith, J.F. van der Veen, C.W.T. Bulle-Lieuwma: J. Appl. Phys. 64, 3005 (1988)

    Google Scholar 

  34. R.T. Tung, F. Schrey: Appl. Surf. Sci. 41/42, 223 (1989)

    Google Scholar 

  35. D. Cherns, D.A. Smith, W. Krakow, P.E. Batson: Philos. Mag. A 45, 107 (1982)

    Google Scholar 

  36. M. Klaua, H. Bethge: Ultramicroscopy 17, 73 (1985)

    Google Scholar 

  37. E.J. van Loenen, A.E.M.J. Fischer, J.F. van der Veen, F.K. LeGoues: Surf. Sci. 154, 52 (1985)

    Google Scholar 

  38. E.R. Weber: Appl. Phys. A 30, 1 (1983)

    Google Scholar 

  39. M.K. Bakhadyrkanov, S. Zainabidinov, A. Khamidov: Sov. Phys. Semicond. 14, 293 (1980)

    Google Scholar 

  40. see M. Volmer: Kinetik der Phasenbildung (Steinkopff, Dresden 1939)

    Google Scholar 

  41. E. Bauser, H. Strunk: J. Crystal. Growth 51, 362 (1981)

    Google Scholar 

  42. K.W. Keller: J. Crystal. Growth 78, 509 (1986)

    Google Scholar 

  43. F.C. Frank: Disc. Faraday Soc. 5, 48 (1949)

    Google Scholar 

  44. W.K. Burton, N. Cabrera, F.C. Frank: Philos. Trans. R. Soc. London A 243, 299 (1951)

    Google Scholar 

  45. A. Catana, P.E. Schmid, P. Lu, D.J. Smith: Philos. Mag. A 66, 933 (1992)

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hesse, D., Werner, P., Mattheis, R. et al. Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface. Appl. Phys. A 57, 415–425 (1993). https://doi.org/10.1007/BF00331780

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00331780

PACS

Navigation