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Exciton line broadening in strained InGaAs/GaAs single quantum wells

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Abstract

We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum-Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratioQ c=0.70±0.05. The strength of the exciton-phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, 200083, Shanghai, People's Republic of China

    W. Z. Shen, W. G. Tang, Z. Y. Li & S. C. Shen

  2. Department of Physics, Chalmers University of Technology, S-41296, Göteborg, Sweden

    T. Andersson

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  1. W. Z. Shen
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  2. W. G. Tang
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  3. Z. Y. Li
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  4. S. C. Shen
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  5. T. Andersson
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Shen, W.Z., Tang, W.G., Li, Z.Y. et al. Exciton line broadening in strained InGaAs/GaAs single quantum wells. Appl. Phys. A 60, 243–245 (1995). https://doi.org/10.1007/BF01538398

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  • DOI: https://doi.org/10.1007/BF01538398

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