Abstract
We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500°C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700°C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200°C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities.
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Störmer, J., Willutzki, P., Britton, D.T. et al. A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE. Appl. Phys. A 61, 71–74 (1995). https://doi.org/10.1007/BF01538214
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DOI: https://doi.org/10.1007/BF01538214