Abstract
Interfaces of bonded hydrophilic and hydrophobic wafer pairs are studied by multiple internal reflection spectroscopy after annealing at 1100°C. Si−Hx and SiO−H stretching modes are still present in bonded hydrophilic wafers. Interfaces of bonded hydrophobic wafers, prepared by joining HF-etched surfaces without defonized water rinsing, are characterized by the dominance of hydrides (SiH, SiH2, SiH3). Their concentration is about 100 times higher than for bonded hydrophilic wafers. Comparison with the ATR-spectra of HF-treated surfaces showed appreciable shifts in the peak positions indicating that Si−H bonds might be involved in the bonding process.
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References
M. Reiche, U. Gösele, Q.-Y. Tong: InSemiconductor Silicon 1994, Proc.94–10, pp. 408–419 (The Electrochemical Society, Pennington 1994)
K. Mitani, U.G. Gösele: J. Electron. Mater.21, 669 (1992)
T. Saitoh, M.E. El-Ghazzawi, T. Oka, N. Natsuaki: Extended Abstracts, Spring Meeting, Honolulu, Hawaii, 1993, Proc., Vol. 93–1 (The Electrochemical Society, Pennington 1993) Abstr. 825
T. Abe, A. Uchiyama, K. Yoshizawa, Y. Makazato, M. Miyawaki, T. Ohmi: Jpn. J. Appl. Phys.29, L2315 (1990)
Terms are used in accordance with the 1967 ASTM Book of Standards, ASTM Designation E131-66T, Part 31
Y.J. Chabal, K. Raghavachari: Phys. Rev. Lett.53, 282 (1984)
Y.J. Chabal: J. Vac. Sci. Technol. A3, 1448 (1985)
Y.J. Chabal, G.S. Higashi, K. Raghavachari, V.A. Burrows: J. Vac. Sci. Technol. A7, 2104 (1989)
V.A. Burrows, Y.J. Chabal, G.S. Higashi, K. Raghavachari, S.B. Christman: Appl. Phys. Lett53, 998 (1988)
S. Watanabe, M. Shigeno: Jpn. J. Appl. Phys.31, 1702 (1992)
H. Bender, S. Verhaverbeke, M.M. Heyns. J. Electrochem. Soc.141, 3128 (1994)
P. Dumas, Y.J. Chabal, P. Jakob: Surf. Sci.269/270, 867 (1992)
D. Feijoo, Y.J. Chabal, S.B. Christman: Appl. Phys. Lett.65, 2548 (1994)
T. Stengl, K.-Y. Ahn, U. Gösele: Jpn. J. Appl. Phys.27, L2364 (1988)
G.S. Higashi: InThe Physics and Chemistry of SiO 2 and the Si−SiO 2 Interface, ed. by C.R. Helms, B.E. Deal (Plenum, New York 1992) pp. 187–197
M. Grunder, D. Graf, P. Hahn, A. Schnegg: Solid State Technol. February, 69 (1991)
M. Grunder, H. Jacob: Appl. Phys. A39, 73 (1986)
Y. Nagasawa, H. Ishida, F. Soeda, A. Ishitani, I. Yoshii, K. Yamamoto: Mikrochim. Acta1, 431 (1988)
K. Sugiyama, T. Igarashi, K. Moriki, Y. Nagasawa, T. Aoyama, R. Sugino, T. Ito, T. Hattori: Jpn. J. Appl. Phys.29, L2401 (1990)