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Depth profiling of copper thin films by resonant laser ablation

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Abstract

In Resonant Laser Ablation (RLA), material is related and selectively ionized by a low-energy pulse from a tunable laser. The selectivity and efficiency allow detection and quantitation at very low concentrations. We demonstrate that RLA has potential use in profiling thin layer and multilayer structures. Quantitative results are reported on the analysis of 20 and 100 Å copper thin films on Si(110) surfaces. Removal rates range from 10−3 to 10−2 Å/shot. Prospects for interrogation of dopants and impurities are also evaluated.

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Authors and Affiliations

  1. Department of Chemistry, University of California at Davis, 95616, Davis, CA, USA

    T. M. Allen & P. B. Kelly

  2. Chemical Science and Technology Division, Los Alamos National Laboratory, MS J565, 87545, Los Alamos, NM, USA

    J. E. Anderson, T. N. Taylor & N. S. Nogar

Authors
  1. T. M. Allen
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  2. P. B. Kelly
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  3. J. E. Anderson
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  4. T. N. Taylor
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  5. N. S. Nogar
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Allen, T.M., Kelly, P.B., Anderson, J.E. et al. Depth profiling of copper thin films by resonant laser ablation. Appl. Phys. A 61, 221–225 (1995). https://doi.org/10.1007/BF01538394

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