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Raman-spectroscopy study of PbTiO3 thin films grown on Si substrates by metalorganic chemical vapor deposition

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Abstract

Raman spectra have been investigated in PbTiO3 thin films grown on Si by metalorganic chemical vapor deposition. A large grazing-angle scattering technique was taken to measure the temperature dependence of Raman spectra below room temperature. All Raman modes in the thin films are assigned and compared with those in the bulk single crystal, a newA 1(TO) soft mode at 104 cm−1 was recorded which satisfies the Curie-Weiss relationω 2 =A(T c −T). Intensities of theA 1(1TO) andE(1TO) modes were anomalously strengthened with increasing temperature. Raman modes for the thin films exhibit remarkable frequency downshift and upshift which is related to the effect of internal stress.

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures and Center for Advanced Studies in Science and Technology of Microstructures, Nanjing University, 210093, Nanjing, People's Republic of China

    W. -H. Ma, M. -S. Zhang, L. Shun, Z. Yin, Q. Chen, Y. -F. Chen & N. -B. Ming

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  1. W. -H. Ma
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  2. M. -S. Zhang
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  3. L. Shun
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  4. Z. Yin
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  5. Q. Chen
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  6. Y. -F. Chen
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  7. N. -B. Ming
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Ma, W.H., Zhang, M.S., Shun, L. et al. Raman-spectroscopy study of PbTiO3 thin films grown on Si substrates by metalorganic chemical vapor deposition. Appl. Phys. A 62, 281–284 (1996). https://doi.org/10.1007/BF01575095

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  • DOI: https://doi.org/10.1007/BF01575095

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