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Application of resonant X-ray emissions for molecular/electronic structure analysis of boron nitrides

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–B1s-1 transitions were observed in w-BN composed of four-fold boron atoms and in h-BN composed of three-fold boron atoms, when the photon energy of the incident undulator beams coincided with the B1s–B2pπ* absorption energy. However, no resonance was observed in c-BN composed of four-fold boron atoms. The resonant X-ray emission reflects the electronic structure of unoccupied molecular orbitals which strongly depend on the conformnations of the boron atoms. These findings confirm that resonant X-ray emissions can be useful indices for molecular and electronic structure analysis of boron nitrides.

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Accepted: 6 March 1997

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Muramatsu, Y., Kouzuki, H., Kaneyoshi, T. et al. Application of resonant X-ray emissions for molecular/electronic structure analysis of boron nitrides . Appl Phys A 65, 191–194 (1997). https://doi.org/10.1007/s003390050564

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  • DOI: https://doi.org/10.1007/s003390050564

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