Skip to main content
SpringerLink
Log in

High quality GaAs quantum wires grown by flow rate modulation epitaxy

  • Invited paper
  • Published:
Applied Physics A Aims and scope Submit manuscript

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. Electrotechnical Laboratory, Agency of Industrial Science and Technology, Ministry of International Trade and Industry, 1-1-4 Umezono Tsukuba-shi, Ibaraki 305, Japan, , , , , , JP

    A. Hamoudi, M. Ogura, X.L. Wang, T. Okada & H. Matsuhata

Authors
  1. A. Hamoudi
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Ogura
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. X.L. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T. Okada
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. H. Matsuhata
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Accepted: 14 October 1997

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hamoudi, A., Ogura, M., Wang, X. et al. High quality GaAs quantum wires grown by flow rate modulation epitaxy . Appl Phys A 66, 137–141 (1998). https://doi.org/10.1007/s003390050650

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s003390050650

Search

Navigation