Abstract.
GaN/TiN heterostructures were deposited on 4° miscut Si(111) substrates by pulsed KrF laser ablation of TiN through vacuum, followed by reactive pulsed KrF laser ablation of liquid Ga through 70–75 mTorr of microwave-activated NH3. Deposition temperatures of 950 °C and 1050 °C were employed for the TiN layer while 900 °C was employed for the GaN layer. The targets were positioned 5 cm from the substrate and ablated by using a reimaging beamline at a nominal energy density of 3–4 J/cm2. X-ray diffraction (XRD) revealed a highly textured heterostructure with GaN(0001)//TiN(111)//Si(111) and with a rocking curve width for both GaN(0001) and TiN(111) equal to ∼1.1°. The mosaic spread through the TiN(001) reflection was ∼1.3°, whereas that of the GaN(101_1) was undetectable because of low S/N. Scanning electron microscopy revealed large oriented 10 μm-sized hexagonal crystallites decorating large depressions in the TiN film with many smaller pits also present. The effect of substrate processing and TiN film processing on pit formation was explored.
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Received: 21 July 1999 / Accepted: 1 September 1999 / Published online: 22 December 1999
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Rouleau, C., Kang, S. & Lowndes, D. Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablation . Appl Phys A 69 (Suppl 1), S441–S445 (1999). https://doi.org/10.1007/s003390051434
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DOI: https://doi.org/10.1007/s003390051434