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Influence of C on Ge incorporation in the growth of Ge-rich Ge1−x−ySixCy alloys on Si (100)

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Abstract.

Ge-rich Ge1−x−ySixCy alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition and the growth rate. A possible mechanism for the suppressive effect is proposed. After calculations of atomic configuration, we obtain the relationship between the degree of suppression and the Ge/C atomic ratio. From the calculation results, a saturation tendency of the suppressive effect is expected with increasing Ge concentration in the growth of Ge1−x−ySixCy alloys.

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Authors and Affiliations

  1. Physics Department, Nanjing University, Nanjing 210093, P.R. China (Fax: +86-25/360-8130, E-mail: ydzheng@netra.nju.edu.cn), , , , , , CN

    X.B. Liu, L. Zang, S.M. Zhu, X.M. Cheng, P. Han, Z.Y. Luo & Y.D. Zheng

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  1. X.B. Liu
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  2. L. Zang
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  3. S.M. Zhu
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  4. X.M. Cheng
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  5. P. Han
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  6. Z.Y. Luo
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  7. Y.D. Zheng
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Received: 16 July 1999 / Accepted: 1 November 1999 / Published online: 8 March 2000

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Liu, X., Zang, L., Zhu, S. et al. Influence of C on Ge incorporation in the growth of Ge-rich Ge1−x−ySixCy alloys on Si (100). Appl Phys A 70, 465–467 (2000). https://doi.org/10.1007/s003390051069

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  • DOI: https://doi.org/10.1007/s003390051069

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