Abstract.
In this paper we present a novel template-based technology for the fabrication of large, periodic arrays of semiconductor nanostructures that is inexpensive, reliable, suitable for the fabrication of a variety of semiconductors, and is compatible with the standard CMOS process. The technique uses material growth on a preformed template formed by electrochemical etching (anodization) of a thin film of aluminum deposited on an arbitrary substrate. The template contains a periodic array of pores in which the nanostructure materials are synthesized. The nanostructure size and periodicity can be controlled by controlling the anodization conditions. We are currently using this fabrication technique to develop a variety of optoelectronic devices, brief descriptions of which are also presented.
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Received: 16 November 1999 / Accepted: 24 November 1999 / Published online: 13 September 2000
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Das, B., McGinnis, S. Novel template-based semiconductor nanostructures and their applications . Appl Phys A 71, 681–688 (2000). https://doi.org/10.1007/s003390000450
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DOI: https://doi.org/10.1007/s003390000450