Abstract
The copolymer of methyl methacrylate and methacrylic acid was developed as a new sensitive resist for the LIGA (Lithographie, Galvanoformung, Abformtechnik) process. The resist exposures were carried out at the LIGA beamline of a superconducting compact light source NIJI-III. The absorbed energy density required to remove the entire exposed resist and produce a defect-free microstructure was between 0.4 and 7 kJ/cm3 (4 and 20 kJ/cm3 for PMMA). The sensitivity and patterning depth of the copolymer were 10 times and 3.5 times, respectively, those of poly methyl methacrylate (PMMA) assuming that both resists were exposed to synchrotron radiation (SR) of the same wavelength. Moreover, the copolymer showed high contrast and process stability.
Similar content being viewed by others
References
Ehrfeld W.;Bley P.;Gotz F.;Mohr J.;Munchmeyer D.;Schelb W. (1988) Progress in deep-etch synchrotron radiation lithography. J. Vac. Sci. Technol. B6, 178–182
Ehrfeld W.;Munchmeyer D. (1991) Three dimensional microfabrication using synchrotron radiation, Nucl. Instr. and Meth. in. Phys. Res. A303, 523–531
Haller I.;Feder R.;Hatzakis M.;Spiller E. (1979) Copolymer of methyl methacrylate and methacrylic acid and their metal salts as radiation sensitive resists. J. Electrochem. Soc. 126(1), 154–161
Hirata Y.; Okuyama H.; Ogino S.; Numazawa T.; Takada H. (1995) Piezoelectric composites for micro-ultrasonic transducers realized-with deep-etch X-ray lithography. Proc. IEEE Micro Electro Mechanical Systems Workshop. 191–196
Mohr J.;Ehrfeld W.;Munchmeyer D. (1988) Requirement on resist layers in deep-etch synchrotron radiation lithography. J. Vac. Sci. Technol. B6 (6), 2264–2267
Muncymeyer D.;Langen J. (1992) Manufacture of three dimensional microdevices using synchrotron radiation, Rev. Sci. Instrum. 63 (1), 713–721
Schnabel W. (1981) Polymer degradation, Hauser Verlag, Berlin
Author information
Authors and Affiliations
Additional information
This work was performed under the management of the Micromachine Center as part of the Research and Development of Micromachine Technology supported by NEDO (New Energy and Industrial Technology Development Organization).
Rights and permissions
About this article
Cite this article
Numazawa, T., Hirata, Y. & Takada, H. The copolymer of methyl methacrylate and methacrylic acid as a sensitive resist for deep-etch X-ray lithography. Microsystem Technologies 2, 46–49 (1996). https://doi.org/10.1007/BF02447749
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF02447749