Investigation of a silicon single crystal by means of the diffraction of Mössbauer radiation

Diffraction experiments with resonant γ-radiation were performed on a single crystal of silicon at room temperature. The high energy resolution of the Mössbauer effect was used to separate elastically and inelastically scattered radiation. A special experimental setup is described, which in addition allows the determination of the total thermal diffuse scattered intensity. Inelastically scattered radiation was observed in the whole investigated angular range. In the vicinity of Bragg reflections the ratio of the integrated intensities of inelastically to elastically scattered radiation was in very good agreement with the results of calculations using different computer programs based on first-order thermal diffuse scattering theory for a wide range of chosen scan lengths. The measured ratios of the elastically scattered radiation of different Bragg reflections were used to determine the temperature factor B.