Journal of Synchrotron Radiation
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J. Synchrotron Rad.
(1999).
6
,
552-554
https://doi.org/10.1107/S0909049598016276
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On the effect of ion implantation in the microstructure of GaN: an XAFS study
M. Katsikini
,
J. Bollmann
,
W. T. Masselink
and
E. C. Paloura
Keywords:
materials science
;
soft X-ray absorption
;
EXAFS
;
GaN
;
implantation
;
defects
.
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