Electron traps at a photooxidised anthracene surface

doi:10.1016/0009-2614(75)80150-3

Chemical Physics Letters

Volume 33, Issue 2, 1 June 1975, Pages 257-260

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Abstract

Electron traps at the surface of photooxidised anthracene crystals were studied by thermally stimulated currents. The trap depth was calculated to be E_t = (1.0 ± 0.1) eV. These surface traps may account for the enhanced optical hole generation observed after photooxidation.

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Electron traps at a photooxidised anthracene surface

Abstract

Phys. Letters

J. Chem. Phys.

J. Chem. Soc.

J. Chem. Phys.

Thesis

Phys. Stat. Sol.