Electron beam tester measurements of switching noise in VLSI circuits
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Cited by (5)
Electron Beam Probing of Integrated Circuits -A Review
1998, Electronics Information and PlanningAnalysis, estimation and reduction of simultaneous switching noise
1996, Canadian Journal of Electrical and Computer EngineeringVerifying SRAM Designs
1992, IEEE Circuits and Devices MagazineMeasurement of VLSI Power Supply Current by Electron-Beam Probing
1992, IEEE Journal of Solid-State Circuits
- 1
Keith A. Jenkins received a PhD in Physics from Columbia University, for work done in experimental high-energy physics. He continued in this field at The Rockefeller University, until he joined the IBM Research Division at the T.J. Watson Research Center, where he first worked in Josephson technology. He is now a member of the Silicon Technology Department, where his current activities include research in high-frequency measurementtechniques, electron beam circuit testing, radiation-device interactions, and low-temperature electronics.
- 2
David F. Heidel received his BS degree in Physics from Miami University in 1974, and his MS and PhD degrees in Physics from the Ohio State University in 1976 and 1980 respectively. In 1980, he joined IBM's Thomas J. Watson Research Center, Yorktown Heights, NY, working on Josephson Technology. Since 1984, he has been working on testing of silicon devices and is presently the manager of the Test Systems Group in the Silicon Technology Department.