Elsevier

Applied Surface Science

Volume 54, 1 January 1992, Pages 386-391
Applied Surface Science

Comparison of laser and line-electron beam recrystallization of thin polycrystalline silicon films

https://doi.org/10.1016/0169-4332(92)90076-AGet rights and content

Abstract

A zone-melting-recrystallization process (ZMR) for thin silicon films was realized using an argon ion laser with high power density as well as a line-electron beam with significantly lower power density. The temperature distribution in a multilayer structure suitable for the ZMR was simulated numerically. Appropriate process parameters are in good agreement with experiment.

References (11)

  • H.W. Lam et al.

    Silicon-on-insulator for VLSI and VHSIC

  • G.D. Cody et al.

    Solar Cells

    (1988)
  • M. Tamura et al.

    Jpn. J. Appl. Phys.

    (1980)
  • J.R. Davis et al.

    J. Electrochem. Soc.

    (1985)
  • M.W. Geis et al.

    J. Electrochem. Soc.

    (1982)
There are more references available in the full text version of this article.

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