Tm doping of III–V semiconductors by MOVPE

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Abstract

We have epitaxially grown various semiconductor hosts with Tm as rare earth element dopant to evaluate the excitation and decay mechanisms of its inner-atomic transitions in semiconductors. Electrical measurements revealed no characteristic influence of the Tm doping, besides a slight decrease of the carrier mobilities. We have detected Tm3+ related emissions at 1.9 and 1.2 μm wavelenght. Highest intensities have been observed in GaInP:Tm samples. The spectra are similar in all semiconductor hosts under investigation. We have found indication that Tm is not only incorporated in regular lattice sites, but probably in the form of complexes. Further, we have done co-doping experiments with S (for n-type doping) and Zn (p-type doping) in combination with Tm. We have found only a slight influence of the doping partner on the optical properties, but no indication for optical transitions of Tm2+.

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