Chemical beam epitaxial growth of InGaAs using a new precursor tri-isopropylgallium

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Abstract

The temperature and As overpressure dependencies of group III composition in the chemical beam epitaxial growth of InGaAs(P) using a new Ga precursor, tri-isopropylgallium, are investigated. The Ga/In incorporation ratio is determined from the depth profile of secondary ion mass spectroscopy. A slightly reduced temperature sensitivity in the ternary growth rate is noticed, compared to the growth using triethylgallium. However, in spite of a substantial difference in their binary growth characteristics, similar temperature dependencies of Ga/In composition ratio for both Ga-precursors suggest a dominant role of In-induced Ga-alkyl desorption.

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