Current drag in semiconductor devices

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Abstract

Electrical currents in semiconductor devices are often carried simultaneously by both electrons and holes. The electron and holes. The electron and hole currents have traditionally been treated as independent, except for recombination phenomena. Simple thermodynamic arguments indicate the possibility that the electrical current of one species may exert a dragging effect upon the other, through their mutual Coulomb interaction. The mutual coupling between current components we have called current drag. We calculate this coupling strength, and show its influence on the operation of a pn diode as an example.

References (8)

  • O. Madelung

    Grundlagen der Halbeiterphysik

    (1970)
  • S.M. Sze
  • D.N. Zubarev
  • A.A. Abrikosov et al.
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