Electrical properties of very thin metal films

doi:10.1016/0040-6090(85)90369-4

Thin Solid Films

Volume 131, Issues 1–2, 14 September 1985, Pages 1-14

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Abstract

Very thin metal films can be treated as quantum boxes, whereby the conductance band of the bulk material is split into sub-bands. The sub-band splitting of some metal films is observed by tunnelling spectroscopy, which provides a new method for the determination of band data. This new method revealed resonance states when a nickel film 0.8 nm thick was evaporated onto a copper film 8 nm thick. Overcoating of copper films with very thin nickel films led to an increase of the resistance of the copper film owing to increased surface scattering of the electrons. This method can be used to determine the scattering cross section. Multilayered sputtered films of the same material showed lower resistivity than continuously sputtered or evaporated films—an effect unexplained at present.

References (15)

G. Fischer et al.
Phys. Rev. B
(1980)
B.T. Jonker et al.
Surf. Sci.
(1983)
R.E. Thomas
J. Appl. Phys.
(1970)
R. Dingle
G.H. DöhlerG.H. Döhler et al.
Phys. Rev. B
(1982)
V.B. Sandomirskii
Sov. Phys.—JETP
(1967)
G. Fischer et al.
Z. Phys. B
(1980)

There are more references available in the full text version of this article.

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^☆: Paper presented at the Sixth International Conference on Thin Films, Stockholm, Sweden, August 13–17, 1984.

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Electrical properties of very thin metal films☆

Abstract

Phys. Rev. B

Surf. Sci.

J. Appl. Phys.

Phys. Rev. B

Sov. Phys.—JETP

Z. Phys. B