D.c. dielectric breakdown in SiO2 films prepared by low temperature chemical vapour deposition

doi:10.1016/0040-6090(86)90378-0

Thin Solid Films

Volume 143, Issue 2, 1 October 1986, Pages 109-112

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Abstract

In this paper we present the results of an experimental study of the d.c. dielectric breakdown in SiO₂ films (prepared by low temperature chemical vapour deposition (LTCVD)) as a function of deposition conditions and subsequent annealings in different ambients. The histograms of the percentage relative frequency vs. the breakdown field showed the following.

1.
(i) The O₂-to-SiH₄ ratio determines the dielectric quality, the ratio corresponding to the maximum deposition rate, at a given temperature, being optimum.
2.
(ii) Subsequent annealings in H₂O vapour at 450°C lead to an improvement in the breakdown characteristics of as-deposited layers.
3.
(iii) Subsequent annealings in dry N₂ at 1000°C have a deleterious effect on the breakdown results.

Physical explanations are given.

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Thin Solid Films

D.c. dielectric breakdown in SiO2 films prepared by low temperature chemical vapour deposition

Abstract

Thin Solid Films

RCA Rev.

J. Vac. Sci. Technol.

Rev. Roum. Chim.

J. Electrochem. Soc.

J. Electrochem. Soc.

J. Electrochem. Soc.

D.c. dielectric breakdown in SiO₂ films prepared by low temperature chemical vapour deposition